BASE PART NUMBER:  MSE1P

CAPACITANCE @ VR, F:  5PF @ 4V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  1A

CURRENT - REVERSE LEAKAGE @ VR:  1ΜA @ 600V

DETAILED DESCRIPTION:  DIODE STANDARD 600V 1A SURFACE MOUNT MICROSMP (DO-219AD)

DIODE TYPE:  STANDARD

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  MSE1PJ-M3/89A

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE - JUNCTION:  -55°C ~ 175°C

PACKAGE / CASE:  MICROSMP

PACKAGING:  REEL

REVERSE RECOVERY TIME (TRR):  780NS

SERIES:  ESMP®

SPEED:  STANDARD RECOVERY >500NS, > 200MA (IO)

SUPPLIER DEVICE PACKAGE:  MICROSMP (DO-219AD)

VOLTAGE - DC REVERSE (VR) (MAX):  600V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.1V @ 1A