CAPACITANCE @ VR, F:  55PF @ 4V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  8A

CURRENT - REVERSE LEAKAGE @ VR:  10ΜA @ 1000V

DIODE TYPE:  STANDARD

EXPANDED DESCRIPTION:  DIODE STANDARD 1000V (1KV) 8A SURFACE MOUNT TO-263AB

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  NSB8MT-E3/81

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE - JUNCTION:  -55°C ~ 150°C

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

SPEED:  STANDARD RECOVERY >500NS, > 200MA (IO)

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-263AB

VOLTAGE - DC REVERSE (VR) (MAX):  1000V (1KV)

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.1V @ 8A

ALTERNATE PARTS:  NSB8MT-E3/45