CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

FAMILY:  TRANSISTORS - FETS, MOSFETS - ARRAYS

GATE CHARGE (QG) @ VGS:  2NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  43PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI1016CX-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  220MW

RDS ON (MAX) @ ID, VGS:  396 MOHM @ 500MA, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-89-6

VGS(TH) (MAX) @ ID:  1V @ 250ΜA