BASE PART NUMBER:  SI1025

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  190MA

DETAILED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 60V 190MA 250MW SURFACE MOUNT SC-89-6

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  1.7NC @ 15V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  23PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI1025X-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  250MW

RDS ON (MAX) @ ID, VGS:  4 OHM @ 500MA, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-89-6

VGS(TH) (MAX) @ ID:  3V @ 250ΜA