BASE PART NUMBER:  SI1029

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  305MA, 190MA

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 60V 305MA, 190MA 250MW SURFACE MOUNT SC-89-6

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.75NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  30PF @ 25V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI1029X-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  250MW

RDS ON (MAX) @ ID, VGS:  1.4 OHM @ 500MA, 10V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  SC-89-6

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA