Electronic Component
SI1967DH-T1-GE3
TrenchFET® FETs - Arrays 1V @ 250µA, 20VAvailability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.3A
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
EXPANDED DESCRIPTION: MOSFET ARRAY 2 P-CHANNEL (DUAL) 20V 1.3A 1.25W SURFACE MOUNT SC-70-6 (SOT-363)
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 P-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 4NC @ 8V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 110PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI1967DH-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-TSSOP, SC-88, SOT-363
PACKAGING: REEL
POWER - MAX: 1.25W
RDS ON (MAX) @ ID, VGS: 490 MOHM @ 910MA, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SC-70-6 (SOT-363)
VGS(TH) (MAX) @ ID: 1V @ 250ΜA


