CONFIGURATION:  SINGLE

DRAIN CURRENT-MAX (ABS) (ID):  2.2 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2301BDS

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE DESCRIPTION:  ,

PART PACKAGE CODE:  SOT-23

PBFREE CODE:  NO

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  900 MW

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)