CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ABS) (ID):  2.6 A

DRAIN CURRENT-MAX (ID):  2.6 A

DRAIN-SOURCE ON RESISTANCE-MAX:  57 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-236AB

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI2302DDS-T1-GE3

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  860 MW

SUBCATEGORY:  FET GENERAL PURPOSE POWERS

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON