CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.5A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  8V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1245PF @ 4V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2305DS-T1-E3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.25W (TA)

RDS ON (MAX) @ ID, VGS:  52 MOHM @ 3.5A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  800MV @ 250ΜA