CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  12NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2309DS-T1-E3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.25W (TA)

RDS ON (MAX) @ ID, VGS:  340 MOHM @ 1.25A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1V @ 250ΜA (MIN)

ALTERNATE PARTS:  SI2309CDS-T1-GE3