CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ID):  3.77 A

DRAIN-SOURCE ON RESISTANCE-MAX:  33 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-236AB

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2312DS-T1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT-23

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN LEAD

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR ELEMENT MATERIAL:  SILICON