CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.2A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 30V 5.2A (TC) 1.25W (TA), 1.8W (TC) SURFACE MOUNT SOT-23-3 (TO-236)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 8V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  560PF @ 15V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2336DS-T1-GE3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.25W (TA), 1.8W (TC)

RDS ON (MAX) @ ID, VGS:  42 MOHM @ 3.8A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA