CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 30V 6A (TC) 1.3W (TA), 2.5W (TC) SURFACE MOUNT SOT-23

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  13NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  424PF @ 15V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2338DS-T1-GE3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA), 2.5W (TC)

RDS ON (MAX) @ ID, VGS:  28 MOHM @ 5.5A, 10V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  SOT-23

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA