CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.3A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 40V 4.3A (TC) 960MW (TA), 1.7W (TC) SURFACE MOUNT TO-236

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  13NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  370PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2356DS-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  46 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  960MW (TA), 1.7W (TC)

RDS ON (MAX) @ ID, VGS:  51 MOHM @ 3.2A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA