CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 30V 8A (TC) 2W (TA), 4.1W (TC) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  33NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1295PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3410DV-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA), 4.1W (TC)

RDS ON (MAX) @ ID, VGS:  19.5 MOHM @ 5A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA