CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.6A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 3.6A (TA) 1.1W (TA) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  9NC @ 4.5V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3443BDV-T1-E3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.1W (TA)

RDS ON (MAX) @ ID, VGS:  60 MOHM @ 4.7A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.4V @ 250ΜA