CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.9A, 2.1A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 3.9A, 2.1A 1.4W, 1.3W SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.8NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  150PF @ 10V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3585CDV-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  1.4W, 1.3W

RDS ON (MAX) @ ID, VGS:  58 MOHM @ 2.5A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  6-TSOP

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA