CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.6A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  P-CHANNEL 30V 1.6A (TA) 830MW (TA) SURFACE MOUNT 6-TSOP

FET FEATURE:  SCHOTTKY DIODE (ISOLATED)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3.6NC @ 5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3851DV-T1-E3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  830MW (TA)

RDS ON (MAX) @ ID, VGS:  200 MOHM @ 1.8A, 10V

SERIES:  LITTLE FOOT®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1V @ 250ΜA (MIN)