CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

EXPANDED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) 20V 2A 830MW SURFACE MOUNT 6-TSOP

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  4NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3900DV-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  830MW

RDS ON (MAX) @ ID, VGS:  125 MOHM @ 2.4A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  6-TSOP

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA