CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  25.7A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET P-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  203NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  8190PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4101DY-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  6W

RDS ON (MAX) @ ID, VGS:  6 MOHM @ 15A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA