CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  7.2A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 40V 7.2A (TC) 2.5W (TA), 4.2W (TC) SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  38NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  970PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4447ADY-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.5W (TA), 4.2W (TC)

RDS ON (MAX) @ ID, VGS:  45 MOHM @ 5A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA