CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  4.5 A

DRAIN-SOURCE ON RESISTANCE-MAX:  55 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  MS-012AA

JESD-30 CODE:  R-PDSO-G8

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI4559EY-T1-E3

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  8

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G8

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.4 W

PULSED DRAIN CURRENT-MAX (IDM):  30 A

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON