CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ID):  7.1 A

DRAIN-SOURCE ON RESISTANCE-MAX:  25 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-F8

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4562DY-T1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  8

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F8

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  40 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN LEAD

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON