CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.5A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 6.5A (TA) 1.3W (TA) SURFACE MOUNT 8-SO

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  13NC @ 5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4800BDY-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA)

RDS ON (MAX) @ ID, VGS:  18.5 MOHM @ 9A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  8-SO

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±25V

VGS(TH) (MAX) @ ID:  1.8V @ 250ΜA