CONFIGURATION:  SINGLE

DRAIN CURRENT-MAX (ABS) (ID):  4.6 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI4833BDY-T1-GE3

MOISTURE SENSITIVITY LEVEL:  1

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE DESCRIPTION:  ,

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.75 W

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  PURE MATTE TIN

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30