CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

FAMILY:  TRANSISTORS - FETS, MOSFETS - ARRAYS

GATE CHARGE (QG) @ VGS:  63NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  2000PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4909DY-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  3.2W

RDS ON (MAX) @ ID, VGS:  27 MOHM @ 8A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA