CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) @ VGS:  50NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4966DY-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  2W

RDS ON (MAX) @ ID, VGS:  25 MOHM @ 7.1A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA