CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  25A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET P-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  120NC @ 8V

INPUT CAPACITANCE (CISS) @ VDS:  4300PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5415AEDU-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -50°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® CHIPFET? SINGLE

PACKAGING:  REEL

POWER - MAX:  31W

RDS ON (MAX) @ ID, VGS:  9.6 MOHM @ 10A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® CHIPFET SINGLE

VGS(TH) (MAX) @ ID:  1V @ 250ΜA