Electronic Component
SI5435BDC-T1-E3
P-CHANNEL 30V 4.3A (TA) 1.3W (TA) SURFACE MOUNT 1206-8 CHIPFET?Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.3A (TA)
DETAILED DESCRIPTION: P-CHANNEL 30V 4.3A (TA) 1.3W (TA) SURFACE MOUNT 1206-8 CHIPFET?
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 24NC @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI5435BDC-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SMD, FLAT LEAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.3W (TA)
RDS ON (MAX) @ ID, VGS: 45 MOHM @ 4.3A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 1206-8 CHIPFET?
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA






