CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A, 3.7A

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

FAMILY:  TRANSISTORS - FETS, MOSFETS - ARRAYS

GATE CHARGE (QG) @ VGS:  4.2NC @ 5V

INPUT CAPACITANCE (CISS) @ VDS:  285PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5513CDC-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER - MAX:  3.1W

RDS ON (MAX) @ ID, VGS:  55 MOHM @ 4.4A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  1206-8 CHIPFET?

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA