BASE PART NUMBER:  SI5515

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 4A 3.1W SURFACE MOUNT 1206-8 CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  11.3NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  632PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5515CDC-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER - MAX:  3.1W

RDS ON (MAX) @ ID, VGS:  36 MOHM @ 6A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  1206-8 CHIPFET?

VGS(TH) (MAX) @ ID:  800MV @ 250ΜA