BASE PART NUMBER:  SI5515

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.4A, 3A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 4.4A, 3A 1.1W SURFACE MOUNT 1206-8 CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  7.5NC @ 4.5V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5515DC-T1-E3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER - MAX:  1.1W

RDS ON (MAX) @ ID, VGS:  40 MOHM @ 4.4A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  1206-8 CHIPFET?

VGS(TH) (MAX) @ ID:  1V @ 250ΜA