CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.7A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 3.7A (TC) 1.3W (TA), 2.8W (TC) SURFACE MOUNT 1206-8 CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET FEATURE:  SCHOTTKY DIODE (ISOLATED)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.8NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  276PF @ 10V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5855CDC-T1-E3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA), 2.8W (TC)

RDS ON (MAX) @ ID, VGS:  144 MOHM @ 2.5A, 4.5V

SERIES:  LITTLE FOOT®

SUPPLIER DEVICE PACKAGE:  1206-8 CHIPFET?

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA