CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 4A (TC) 1.7W (TA), 3.1W (TC) SURFACE MOUNT 1206-8 CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 10V

FET FEATURE:  SCHOTTKY DIODE (ISOLATED)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  12NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  330PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI5913DC-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.7W (TA), 3.1W (TC)

RDS ON (MAX) @ ID, VGS:  84 MOHM @ 3.7A, 10V

SERIES:  LITTLE FOOT®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  1206-8 CHIPFET?

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA