BASE PART NUMBER:  SI6562

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.7A, 6.1A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 6.7A, 6.1A 1.6W, 1.7W SURFACE MOUNT 8-TSSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  23NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  850PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI6562CDQ-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-TSSOP (0.173", 4.40MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  1.6W, 1.7W

RDS ON (MAX) @ ID, VGS:  22 MOHM @ 5.7A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  8-TSSOP

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA