CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.1A

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

EXPANDED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) 20V 4.1A 830MW SURFACE MOUNT 8-TSSOP

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  10.5NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI6926ADQ-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-TSSOP (0.173", 4.40MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  830MW

RDS ON (MAX) @ ID, VGS:  30 MOHM @ 4.5A, 4.5V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  8-TSSOP

VGS(TH) (MAX) @ ID:  1V @ 250ΜA