CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  35A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 35A (TC) 3.8W (TA), 52W (TC) SURFACE MOUNT POWERPAK® 1212-8

DRAIN TO SOURCE VOLTAGE (VDSS):  12V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  110NC @ 8V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3720PF @ 6V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7102DN-T1-E3

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -50°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.8W (TA), 52W (TC)

RDS ON (MAX) @ ID, VGS:  3.8 MOHM @ 15A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA