SI7116DN-T1-E3

Factory Authorized Line

VISHAY

Electronic Component

SI7116DN-T1-E3

N-CHANNEL 40V 10.5A (TA) 1.5W (TA) SURFACE MOUNT POWERPAK® 1212-8
Call for availability VISHAY
Mfr Part # SI7116DN-T1-E3
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  POWERPAK® 1212-8PACKAGING:  REELSTANDARD PACKAGE:  1SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10.5A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 40V 10.5A (TA) 1.5W (TA) SURFACE MOUNT POWERPAK® 1212-8

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  23NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7116DN-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.5W (TA)

RDS ON (MAX) @ ID, VGS:  7.8 MOHM @ 16.4A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA