AVALANCHE ENERGY RATING (EAS):  61.25 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ID):  60 A

DRAIN-SOURCE ON RESISTANCE-MAX:  1.6 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-C5

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI7157DP-T1-GE3

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-C5

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  300 A

SURFACE MOUNT:  YES

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON