Electronic Component
SI7326DN-T1-GE3
N-CHANNEL 30V 6.5A (TA) 1.5W (TA) SURFACE MOUNT POWERPAK® 1212-8Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.5A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
EXPANDED DESCRIPTION: N-CHANNEL 30V 6.5A (TA) 1.5W (TA) SURFACE MOUNT POWERPAK® 1212-8
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 13NC @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7326DN-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® 1212-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.5W (TA)
RDS ON (MAX) @ ID, VGS: 19.5 MOHM @ 10A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1.8V @ 250ΜA






