Electronic Component
SI7390DP-T1-E3
N-CHANNEL 30V 9A (TA) 1.8W (TA) SURFACE MOUNT POWERPAK® SO-8Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
EXPANDED DESCRIPTION: N-CHANNEL 30V 9A (TA) 1.8W (TA) SURFACE MOUNT POWERPAK® SO-8
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 15NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7390DP-T1-E3
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.8W (TA)
RDS ON (MAX) @ ID, VGS: 9.5 MOHM @ 15A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA






