CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  3.6 A

DRAIN CURRENT-MAX (ID):  3.6 A

DRAIN-SOURCE ON RESISTANCE-MAX:  65 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  S-XDSO-C5

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7415DN-T1-E3

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  SMALL OUTLINE, S-XDSO-C5

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  3.8 W

PULSED DRAIN CURRENT-MAX (IDM):  30 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON