DRAIN CURRENT-MAX (ABS) (ID):  5.4 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI7501DN-T1

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE DESCRIPTION:  ,

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

POWER DISSIPATION-MAX (ABS):  3.1 W

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)