Electronic Component
SI7633DP-T1-GE3
P-CHANNEL 20V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 60A (TC)
DETAILED DESCRIPTION: P-CHANNEL 20V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 260NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 9500PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7633DP-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 6.25W (TA), 104W (TC)
RDS ON (MAX) @ ID, VGS: 3.3 MOHM @ 20A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA






