CASE CONNECTION:  DRAIN

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ID):  6.4 A

DRAIN-SOURCE ON RESISTANCE-MAX:  22 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-XDSO-C6

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7844DP-T1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-XDSO-C6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  20 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN LEAD

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON