AVALANCHE ENERGY RATING (EAS):  1.25 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ABS) (ID):  1.8 A

DRAIN CURRENT-MAX (ID):  1.8 A

DRAIN-SOURCE ON RESISTANCE-MAX:  195 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  S-XDSO-C6

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7922DN-T1-E3

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  SMALL OUTLINE, S-XDSO-C6

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.6 W

PULSED DRAIN CURRENT-MAX (IDM):  10 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWERS

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON