CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DETAILED DESCRIPTION:  P-CHANNEL 20V 1.1W (TA), 2.7W (TC) SURFACE MOUNT 4-WLCSP (1.6X1.6)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  110NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2800PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI8425DB-T1-E1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-UFBGA, WLCSP

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.1W (TA), 2.7W (TC)

RDS ON (MAX) @ ID, VGS:  23 MOHM @ 2A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  4-WLCSP (1.6X1.6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  900MV @ 250ΜA