CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DETAILED DESCRIPTION:  P-CHANNEL 8V 500MW (TA) SURFACE MOUNT 4-MICROFOOT

DRAIN TO SOURCE VOLTAGE (VDSS):  8V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.2V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  10NC @ 4.5V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI8805EDB-T2-E1

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-XFBGA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  500MW (TA)

RDS ON (MAX) @ ID, VGS:  68 MOHM @ 1.5A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  4-MICROFOOT

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±5V

VGS(TH) (MAX) @ ID:  700MV @ 250ΜA