CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DETAILED DESCRIPTION:  N-CHANNEL 20V 500MW (TA) SURFACE MOUNT 4-MICROFOOT

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.2V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17NC @ 8V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI8812DB-T2-E1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-UFBGA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  500MW (TA)

RDS ON (MAX) @ ID, VGS:  59 MOHM @ 1A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  4-MICROFOOT

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±5V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA