BASE PART NUMBER:  SI9926

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) 20V 8A 3.1W SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  33NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1200PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI9926CDY-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  3.1W

RDS ON (MAX) @ ID, VGS:  18 MOHM @ 8.3A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA

ALTERNATE PARTS:  SI9926CDY-T1-E3